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ARSENOSILICA FILM SOURCE FOR MICROWAVE TRANSISTOR
被引:9
作者
:
PAREKH, PC
论文数:
0
引用数:
0
h-index:
0
机构:
TRW INC,SEMICOND DIV,14520 AVIATION BLVD,LAWNDALE,CA 90260
TRW INC,SEMICOND DIV,14520 AVIATION BLVD,LAWNDALE,CA 90260
PAREKH, PC
[
1
]
KOLMANN, K
论文数:
0
引用数:
0
h-index:
0
机构:
TRW INC,SEMICOND DIV,14520 AVIATION BLVD,LAWNDALE,CA 90260
TRW INC,SEMICOND DIV,14520 AVIATION BLVD,LAWNDALE,CA 90260
KOLMANN, K
[
1
]
机构
:
[1]
TRW INC,SEMICOND DIV,14520 AVIATION BLVD,LAWNDALE,CA 90260
来源
:
SOLID-STATE ELECTRONICS
|
1974年
/ 17卷
/ 04期
关键词
:
D O I
:
10.1016/0038-1101(74)90131-2
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:395 / &
相关论文
共 28 条
[1]
STRUCTUAL CHANGES OF ARSENIC SILICATE GLASSES WITH HEAT TREATMENTS
ARAI, E
论文数:
0
引用数:
0
h-index:
0
ARAI, E
TERUNUMA, Y
论文数:
0
引用数:
0
h-index:
0
TERUNUMA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1970,
9
(06)
: 691
-
+
[2]
DESIGN AND PERFORMANCE OF SMALL-SIGNAL MICROWAVE TRANSISTORS
ARCHER, JA
论文数:
0
引用数:
0
h-index:
0
ARCHER, JA
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(03)
: 249
-
&
[3]
BONIS M, 1972, OCT MIAM M EL SOC
[4]
CUCCIA A, 1969, MAY M EL CHEM SOC NE
[5]
ALTERNATIVE RELATIONSHIP FOR CONVERTING INCREMENTAL SHEET RESISTIVITY MEASUREMENTS INTO PROFILES OF IMPURITY CONCENTRATION
EVANS, RA
论文数:
0
引用数:
0
h-index:
0
EVANS, RA
DONOVAN, RP
论文数:
0
引用数:
0
h-index:
0
DONOVAN, RP
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(02)
: 155
-
&
[6]
HIGH-CONCENTRATION ARSENIC DIFFUSION IN SILICON FROM A DOPED OXIDE SOURCE
FAIR, RB
论文数:
0
引用数:
0
h-index:
0
FAIR, RB
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(10)
: 1389
-
&
[7]
QUANTITATIVE THEORY OF RETARDED BASE DIFFUSION IN SILICON N-P-N STRUCTURES WITH ARSENIC EMITTERS
FAIR, RB
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,READING,PA 19603
BELL TEL LABS,READING,PA 19603
FAIR, RB
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(01)
: 283
-
291
[8]
ARSENIC GLASS SOURCE DIFFUSION IN SI AND SIO2
GHEZZO, M
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CORP RES & DEV,SCHENECTADY,NY 12301
GE,CORP RES & DEV,SCHENECTADY,NY 12301
GHEZZO, M
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CORP RES & DEV,SCHENECTADY,NY 12301
GE,CORP RES & DEV,SCHENECTADY,NY 12301
BROWN, DM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(01)
: 110
-
116
[9]
ARSENIC EMITTER STRUCTURE FOR HIGH-PERFORMANCE SILICON TRANSISTORS
GHOSH, HN
论文数:
0
引用数:
0
h-index:
0
GHOSH, HN
OBERAI, AS
论文数:
0
引用数:
0
h-index:
0
OBERAI, AS
CHANG, JJ
论文数:
0
引用数:
0
h-index:
0
CHANG, JJ
VORA, MB
论文数:
0
引用数:
0
h-index:
0
VORA, MB
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1971,
15
(06)
: 457
-
+
[10]
INTERACTIONS IN SEQUENTIAL DIFFUSION PROCESSES IN SEMICONDUCTORS
HU, SM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Components Division, East Fishkill Facility, Hopewell Junction, NY
HU, SM
SCHMIDT, S
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Components Division, East Fishkill Facility, Hopewell Junction, NY
SCHMIDT, S
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(09)
: 4272
-
+
←
1
2
3
→
共 28 条
[1]
STRUCTUAL CHANGES OF ARSENIC SILICATE GLASSES WITH HEAT TREATMENTS
ARAI, E
论文数:
0
引用数:
0
h-index:
0
ARAI, E
TERUNUMA, Y
论文数:
0
引用数:
0
h-index:
0
TERUNUMA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1970,
9
(06)
: 691
-
+
[2]
DESIGN AND PERFORMANCE OF SMALL-SIGNAL MICROWAVE TRANSISTORS
ARCHER, JA
论文数:
0
引用数:
0
h-index:
0
ARCHER, JA
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(03)
: 249
-
&
[3]
BONIS M, 1972, OCT MIAM M EL SOC
[4]
CUCCIA A, 1969, MAY M EL CHEM SOC NE
[5]
ALTERNATIVE RELATIONSHIP FOR CONVERTING INCREMENTAL SHEET RESISTIVITY MEASUREMENTS INTO PROFILES OF IMPURITY CONCENTRATION
EVANS, RA
论文数:
0
引用数:
0
h-index:
0
EVANS, RA
DONOVAN, RP
论文数:
0
引用数:
0
h-index:
0
DONOVAN, RP
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(02)
: 155
-
&
[6]
HIGH-CONCENTRATION ARSENIC DIFFUSION IN SILICON FROM A DOPED OXIDE SOURCE
FAIR, RB
论文数:
0
引用数:
0
h-index:
0
FAIR, RB
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(10)
: 1389
-
&
[7]
QUANTITATIVE THEORY OF RETARDED BASE DIFFUSION IN SILICON N-P-N STRUCTURES WITH ARSENIC EMITTERS
FAIR, RB
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,READING,PA 19603
BELL TEL LABS,READING,PA 19603
FAIR, RB
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(01)
: 283
-
291
[8]
ARSENIC GLASS SOURCE DIFFUSION IN SI AND SIO2
GHEZZO, M
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CORP RES & DEV,SCHENECTADY,NY 12301
GE,CORP RES & DEV,SCHENECTADY,NY 12301
GHEZZO, M
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CORP RES & DEV,SCHENECTADY,NY 12301
GE,CORP RES & DEV,SCHENECTADY,NY 12301
BROWN, DM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(01)
: 110
-
116
[9]
ARSENIC EMITTER STRUCTURE FOR HIGH-PERFORMANCE SILICON TRANSISTORS
GHOSH, HN
论文数:
0
引用数:
0
h-index:
0
GHOSH, HN
OBERAI, AS
论文数:
0
引用数:
0
h-index:
0
OBERAI, AS
CHANG, JJ
论文数:
0
引用数:
0
h-index:
0
CHANG, JJ
VORA, MB
论文数:
0
引用数:
0
h-index:
0
VORA, MB
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1971,
15
(06)
: 457
-
+
[10]
INTERACTIONS IN SEQUENTIAL DIFFUSION PROCESSES IN SEMICONDUCTORS
HU, SM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Components Division, East Fishkill Facility, Hopewell Junction, NY
HU, SM
SCHMIDT, S
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Components Division, East Fishkill Facility, Hopewell Junction, NY
SCHMIDT, S
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(09)
: 4272
-
+
←
1
2
3
→