CORE-LEVEL PHOTOEMISSION INVESTIGATION OF ATOMIC-FLUORINE ADSORPTION ON GAAS(110)

被引:28
作者
MCLEAN, AB
TERMINELLO, LJ
MCFEELY, FR
机构
来源
PHYSICAL REVIEW B | 1989年 / 40卷 / 17期
关键词
D O I
10.1103/PhysRevB.40.11778
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:11778 / 11785
页数:8
相关论文
共 25 条
[11]   DELOCALIZATION EFFECTS AT METAL-SEMICONDUCTOR INTERFACES [J].
LUDEKE, R ;
JEZEQUEL, G ;
TALEBIBRAHIMI, A .
PHYSICAL REVIEW LETTERS, 1988, 61 (05) :601-604
[12]   CHEMISORPTION GEOMETRY ON CLEAVED III-V SURFACES - CL ON GAAS, GASB, AND INSB [J].
MARGARITONDO, G ;
ROWE, JE ;
BERTONI, CM ;
CALANDRA, C ;
MANGHI, F .
PHYSICAL REVIEW B, 1979, 20 (04) :1538-1545
[13]   SYNCHROTRON PHOTOEMISSION INVESTIGATION OF THE INITIAL-STAGES OF FLUORINE ATTACK ON SI SURFACES - RELATIVE ABUNDANCE OF FLUOROSILYL SPECIES [J].
MCFEELY, FR ;
MORAR, JF ;
SHINN, ND ;
LANDGREN, G ;
HIMPSEL, FJ .
PHYSICAL REVIEW B, 1984, 30 (02) :764-770
[14]  
MCLEAN AB, 1989, SURF SCI, V220, pL671, DOI 10.1016/0039-6028(89)90456-1
[15]  
MILLER T, 1984, PHYS REV B, V29, P7034, DOI 10.1103/PhysRevB.29.7034
[16]   MECHANISMS OF SCHOTTKY-BARRIER FORMATION IN METAL-SEMICONDUCTOR CONTACTS [J].
MONCH, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1270-1276
[17]   SYNCHROTRON PHOTOEMISSION INVESTIGATION - FLUORINE ON SILICON SURFACES [J].
MORAR, JF ;
MCFEELY, FR ;
SHINN, ND ;
LANDGREN, G ;
HIMPSEL, FJ .
APPLIED PHYSICS LETTERS, 1984, 45 (02) :174-176
[18]   FORMATION OF SCHOTTKY-BARRIER AT THE TM/GAAS(110) INTERFACE [J].
PRIETSCH, M ;
DOMKE, M ;
LAUBSCHAT, C ;
KAINDL, G .
PHYSICAL REVIEW LETTERS, 1988, 60 (05) :436-439
[19]   SURFACE CORE-LEVEL SHIFTS FOR CHLORINE COVERED GAAS (110) SURFACES [J].
SCHNELL, RD ;
RIEGER, D ;
BOGEN, A ;
WANDELT, K ;
STEINMANN, W .
SOLID STATE COMMUNICATIONS, 1985, 53 (02) :205-208
[20]   CORRELATION BETWEEN EF PINNING AND DEVELOPMENT OF METALLIC CHARACTER IN AG OVERLAYERS ON GAAS(110) [J].
STILES, K ;
KAHN, A .
PHYSICAL REVIEW LETTERS, 1988, 60 (05) :440-443