THE OXIDATION CHARACTERISTICS OF NITROGEN-IMPLANTED SILICON

被引:10
作者
JOSQUIN, WJMJ [1 ]
机构
[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
来源
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 47卷 / 1-4期
关键词
D O I
10.1080/00337578008209214
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
引用
收藏
页码:221 / 224
页数:4
相关论文
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