HIGH-QUALITY MOSFETS WITH ULTRATHIN LPCVD GATE SIO2

被引：20

作者：

AHN, J

TING, W

KWONG, DL

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, Austin, TX

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 04期

关键词：

D O I：

10.1109/55.145015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, MOSFET's and MOS capacitors with ultrathin (65 angstrom) LPCVD gate SiO2 have been fabricated and compared to those with thermal SiO2 of identical thickness. Results show that the devices with LPCVD SiO2 have higher transconductance and current drivability, better channel hot-carrier immunity, less defect density, and better time-dependent dielectric breakdown (TDDB) characteristics than devices with conventional thermal SiO2.

引用

页码：186 / 188

页数：3

共 12 条

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