THRESHOLD-VOLTAGE INSTABILITY OF N-CHANNEL MOSFETS UNDER BIAS-TEMPERATURE AGING

被引：20

作者：

SHIONO, N

HASHIMOTO, C

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 03期

关键词：

D O I：

10.1109/T-ED.1982.20710

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：361 / 368

页数：8

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