ENHANCED OXYGEN DIFFUSION IN SILICON AT THERMAL DONOR FORMATION TEMPERATURE

被引：25

作者：

LEE, ST

FELLINGER, P

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 26期

关键词：

D O I：

10.1063/1.97193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1793 / 1795

页数：3

共 17 条

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[8] OUTDIFFUSION AND DIFFUSION MECHANISM OF OXYGEN IN SILICON [J].

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NICHOLS, D .

APPLIED PHYSICS LETTERS, 1985, 47 (09) :1001-1003

[9]

LEE ST, 1986, OXYGEN CARBON HYDROG, P31

[10] DIFFUSIVITY OF OXYGEN IN SILICON DURING STEAM OXIDATION [J].

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APPLIED PHYSICS LETTERS, 1982, 40 (04) :336-337

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