DEPLETION-DISCHARGE TRANSIENT SPECTROSCOPY - DIRECT DETERMINATION OF THE DENSITY OF DEEP EMISSION STATES IN AMORPHOUS-SEMICONDUCTORS

被引：3

作者：

NAKAYAMA, Y ^{[1
]}

AKITA, S ^{[1
]}

KAWAMURA, T ^{[1
]}

机构：

[1] UNIV OSAKA PREFECTURE,COLL ENGN,SAKAI,OSAKA 591,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 03期

关键词：

D O I：

10.1143/JJAP.27.L320

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L320 / L322

页数：3

共 12 条

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