SIO2 GROWTH ON GAAS AS A RESULT OF CHEMICAL-REACTIONS BETWEEN SI AND GAAS OXIDES

被引：3

作者：

CUBERES, MT

SACEDON, JL

机构：

[1] Instituto de Ciencia de Materiales (CSIC), 28006 Madrid

来源：

SURFACE SCIENCE | 1991年 / 251卷

关键词：

D O I：

10.1016/0039-6028(91)90960-Z

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A study of the interfacial chemical reactivity of Si with GaAs oxides has been performed by X-ray photoelectron spectroscopy (XPS). The deposition of Si on an oxidized GaAs substrate results in the complete reduction of the GaAs oxide layer (about 5 angstrom thick) and the formation of SiO2 at the GaAs interface. The kinetics of the interfacial reactions have been investigated. A quantitative treatment of the XPS data reveals the formation of a GaAs/SiO2/Si structure, where the Si overlayer grows homogeneously and no gross interdiffusion between the GaAs substrate and the Si overlayer occurs.

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页码：92 / 96

页数：5

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