HIGH-SENSITIVITY INGAASP-INP PHOTOTRANSISTORS

被引：30

作者：

TOBE, M ^{[1
]}

AMEMIYA, Y ^{[1
]}

SAKAI, S ^{[1
]}

UMENO, M ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 01期

关键词：

D O I：

10.1063/1.91706

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：73 / 75

页数：3

共 13 条

[1] TEMPERATURE DEPENDENCE OF IONIZATION RATES IN GE [J].

DAI, BT ;

CHANG, CY .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :5198-&

[2] BE-IMPLANTED 1.3-MUM INGAASP AVALANCHE PHOTODETECTORS [J].

FENG, M ;

OBERSTAR, JD ;

WINDHORN, TH ;

COOK, LW ;

STILLMAN, GE ;

STREETMAN, BG .

APPLIED PHYSICS LETTERS, 1979, 34 (09) :591-593

[3]

GROVE AS, 1967, PHYS TECHNOL S, P214

[4] GAINASP-INP AVALANCHE PHOTO-DIODES [J].

HURWITZ, CE ;

HSIEH, JJ .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :487-489

[5] (GAAL)AS-GAAS HETEROJUNCTION TRANSISTORS WITH HIGH INJECTION EFFICIENCY [J].

KONAGAI, M ;

TAKAHASHI, K .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2120-2124

[6] ION-IMPLANTED INGAASP AVALANCHE PHOTO-DIODE [J].

LAW, HD ;

TOMASETTA, LR ;

NAKANO, K .

APPLIED PHYSICS LETTERS, 1978, 33 (11) :920-922

[7]

LEE TP, 1979, IEEE J QUANTUM ELECT, V15, P30

[8] AL0.5GA0.5AS-GAAS HETEROJUNCTION PHOTOTRANSISTORS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

MILANO, RA ;

WINDHORN, TH ;

ANDERSON, ER ;

STILLMAN, GE ;

DUPUIS, RD ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1979, 34 (09) :562-564

[9] INGAASP-INP DOUBLE-HETEROSTRUCTURE PHOTO-DIODES [J].

SAKAI, S ;

UMENO, M ;

AMEMIYA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (09) :1701-1702

[10] INGAASP-INP PHOTO-DIODES ANTI-REFLECTIVELY COATED WITH INP NATIVE OXIDE [J].

SAKAI, S ;

UMENO, M ;

AOKI, T ;

TOBE, M ;

AMEMIYA, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (10) :1077-1079

← 1 2 →