SURFACE PATTERNING OF GAAS BY CCL2F2 REACTIVE ION ETCHING

被引：4

作者：

HILTON, KP

WOODWARD, J

机构：

来源：

VACUUM | 1988年 / 38卷 / 07期

关键词：

D O I：

10.1016/0042-207X(88)90012-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：519 / 525

页数：7

共 17 条

[1] REACTIVE ION ETCHING OF GAAS USING CCL2F2 AND THE EFFECT OF AR ADDITION [J].

CHAPLART, J ;

FAY, B ;

LINH, NT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1050-1052

[2] HIGH-RATE MASKED ETCHING OF GAAS BY MAGNETRON ION ETCHING [J].

CONTOLINI, RJ ;

DASARO, LA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (03) :706-713

[3] MICROWAVE SPECTROSCOPIC MEASUREMENT OF THE ELECTRON-DENSITY IN A PLANAR DISCHARGE - RELATION TO REACTIVE-ION ETCHING OF SILICON-OXIDE [J].

DEVRIES, OAM ;

VANROOSMALEN, AJ ;

PUYLAERT, GCC .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (09) :4386-4390

[4] APPLICATION OF PLASMA-ETCHING TO VIA HOLE FABRICATION IN THICK GAAS SUBSTRATES [J].

GEISSBERGER, AE ;

CLAYTOR, PR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :863-866

[5] SELECTIVE DRY ETCHING OF ALGAAS-GAAS HETEROJUNCTION [J].

HIKOSAKA, K ;

MIMURA, T ;

JOSHIN, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :L847-L850

[6] VIA HOLES FOR GAAS MMICS FABRICATED USING REACTIVE ION ETCHING [J].

HILTON, KP ;

WOODWARD, J .

ELECTRONICS LETTERS, 1985, 21 (21) :962-963

[7] DRY ETCHING OF THROUGH SUBSTRATE VIA HOLES FOR GAAS MMICS [J].

HIPWOOD, LG ;

WOOD, PN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :395-397

[8] REACTIVE ION ETCHING OF GAAS IN A CHLORINE PLASMA [J].

HU, EL ;

HOWARD, RE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01) :85-88

[9] REACTIVE ION ETCHING OF GAAS IN CCI4-XFX(X=0,2,4) AND MIXED CCI4-XFX/AR DISCHARGES [J].

KLINGER, RE ;

GREENE, JE .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1595-1604

[10] SELECTIVE GAAS/ALXGA1-X AS REACTIVE ION ETCHING USING CCL2F2 [J].

KNOEDLER, CM ;

KUECH, TF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (05) :1233-1236

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