SIGE RESONANT TUNNELING HOT-CARRIER TRANSISTOR

被引：15

作者：

RHEE, SS

CHANG, GK

CARNS, TK

WANG, KL

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 11期

关键词：

D O I：

10.1063/1.102565

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A SiGe three-terminal hot-hole transistor using a double-barrier resonant tunneling structure as an emitter is fabricated. Injected carriers from the emitter are transferred near-ballistically into the collector through a thin base. The demonstrated main feature of the device is a controllable negative differential resistance in the collector current. Utilizing the high-speed characteristics of the tunneling process and negative differential resistance, integration of the device into Si technology could find applications in the areas of high-speed digital circuits, frequency multipliers, and tunable oscillators/amplifiers.

引用

页码：1061 / 1063

页数：3

共 18 条

[1]

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