PROCESSES FOR MULTILEVEL METALLIZATION

[61] APPLICATION OF RF DISCHARGES TO SPUTTERING [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 168 - &

[62] KOENIG HR, 1972, Patent No. 3661761

[63] INITIAL OXIDATION OF ALUMINUM THIN-FILMS AT ROOM-TEMPERATURE [J]. SURFACE SCIENCE, 1972, 30 (02) : 263 - &

[64] STRESS IN THIN FILMS OF SILANE VAPOR-DEPOSITED SILICON DIOXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (05) : 620 - &

[65] INTERNAL STRESSES AND INTERDIFFUSION OF TI-PD-AU FILMS STUDIED BY X-RAY-DIFFRACTION TECHNIQUES [J]. THIN SOLID FILMS, 1972, 10 (02) : 273 - +

[66] USE OF SPUTTERED CONDUCTOR MATERIALS IN FILM INTEGRATED-CIRCUITS [J]. THIN SOLID FILMS, 1972, 14 (01) : 87 - 103

[67] LAWRENCE J, 1972, ELECTROCHEM SOC EXTE, V191, P466

[68] EFFECT OF REDUNDANT MICROSTRUCTURE ON ELECTROMIGRATION-INDUCED FAILURE [J]. APPLIED PHYSICS LETTERS, 1971, 19 (08) : 292 - &

[69] ANISOTROPIC ETCHING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4569 - &

[70] LOEB WE, 1971, SPE J, V27, P46

[61] APPLICATION OF RF DISCHARGES TO SPUTTERING [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 168 - &

[62] KOENIG HR, 1972, Patent No. 3661761

[63] INITIAL OXIDATION OF ALUMINUM THIN-FILMS AT ROOM-TEMPERATURE [J]. SURFACE SCIENCE, 1972, 30 (02) : 263 - &

[64] STRESS IN THIN FILMS OF SILANE VAPOR-DEPOSITED SILICON DIOXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (05) : 620 - &

[65] INTERNAL STRESSES AND INTERDIFFUSION OF TI-PD-AU FILMS STUDIED BY X-RAY-DIFFRACTION TECHNIQUES [J]. THIN SOLID FILMS, 1972, 10 (02) : 273 - +

[66] USE OF SPUTTERED CONDUCTOR MATERIALS IN FILM INTEGRATED-CIRCUITS [J]. THIN SOLID FILMS, 1972, 14 (01) : 87 - 103

[67] LAWRENCE J, 1972, ELECTROCHEM SOC EXTE, V191, P466

[68] EFFECT OF REDUNDANT MICROSTRUCTURE ON ELECTROMIGRATION-INDUCED FAILURE [J]. APPLIED PHYSICS LETTERS, 1971, 19 (08) : 292 - &

[69] ANISOTROPIC ETCHING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4569 - &

[70] LOEB WE, 1971, SPE J, V27, P46