SINGLE-MODE LASER WITH A V-SHAPED ACTIVE LAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION - A V-SHAPED DOUBLE HETEROSTRUCTURE LASER

被引：10

作者：

MORI, Y

MATSUDA, O

WATANABE, N

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 09期

关键词：

D O I：

10.1063/1.329522

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5429 / 5433

页数：5

共 10 条

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[6] CHANNELED SUBSTRATE BURIED HETEROSTRUCTURE GAAS-(GAAL)AS INJECTION-LASERS [J].

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[7] ALGAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION FOR VISIBLE LASER [J].

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JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :2792-2798

[8] V-DH LASER - A LASER WITH A V-SHAPED ACTIVE REGION GROWN BY METALORGANIC CVD [J].

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ELECTRONICS LETTERS, 1980, 16 (20) :785-787

[9]

SUSAKI W, 1977, IEEE J QUANTUM ELECT, V13, P5878

[10] GAAS-GA1-XALXAS BURIED-HETEROSTRUCTURE INJECTION LASERS [J].

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