REDUCTION OF SAUCER PIT MICRODEFECTS IN EPITAXIAL SILICON-WAFER BY INTRINSIC GETTERING

被引：24

作者：

TSUYA, H

TANNO, K

SHIMURA, F

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 08期

关键词：

D O I：

10.1063/1.91615

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：658 / 660

页数：3

共 11 条

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