INP-YB LAYERS GROWN BY ADDUCT METALORGANIC VAPOR-PHASE EPITAXY USING YB(MECP)3

被引:15
作者
WEBER, J [1 ]
MOLASSIOTI, A [1 ]
MOSER, M [1 ]
STAPOR, A [1 ]
SCHOLZ, F [1 ]
HORCHER, G [1 ]
FORCHEL, A [1 ]
HAMMEL, A [1 ]
LAUBE, G [1 ]
WEIDLEIN, J [1 ]
机构
[1] UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
关键词
D O I
10.1063/1.100197
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:2525 / 2527
页数:3
相关论文
共 11 条
[1]  
FAVENNEC PN, 1987, ELECTRON LETT, V23, P685
[2]  
HAMMEL A, COMMUNICATION
[3]   YTTERBIUM-DOPED INP LIGHT-EMITTING DIODE AT 1.0-MU-M [J].
HAYDL, WH ;
MULLER, HD ;
ENNEN, H ;
KORBER, W ;
BENZ, KW .
APPLIED PHYSICS LETTERS, 1985, 46 (09) :870-872
[4]   RARE-EARTH IONS IN LPE III-V SEMICONDUCTORS [J].
KORBER, W ;
WEBER, J ;
HANGLEITER, A ;
BENZ, KW ;
ENNEN, H ;
MULLER, HD .
JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) :741-744
[5]  
LAUBE G, IN PRESS J CRYST GRO
[6]   LIQUID-PHASE EPITAXY AND CHARACTERIZATION OF RARE-EARTH-ION (YB, ER) DOPED INP [J].
NAKAGOME, H ;
TAKAHEI, K ;
HOMMA, Y .
JOURNAL OF CRYSTAL GROWTH, 1987, 85 (03) :345-356
[7]   ERBIUM-DOPED GAAS LIGHT-EMITTING DIODE AT 1.54 MU-M [J].
ROLLAND, A ;
LECORRE, A ;
FAVENNEC, PN ;
GAUNEAU, M ;
LAMBERT, B ;
LECROSNIER, D ;
LHARIDON, H ;
MOUTONNET, D ;
ROCHAIX, C .
ELECTRONICS LETTERS, 1988, 24 (15) :956-958
[8]   PHOTOLUMINESCENCE CHARACTERIZATION OF RARE-EARTH (ER,YB)-DOPED INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
TAKAHEI, K ;
UWAI, K ;
NAKAGOME, H .
JOURNAL OF LUMINESCENCE, 1988, 40-1 :901-902
[9]   OBSERVATION OF ENHANCED SINGLE LONGITUDINAL MODE-OPERATION IN 1.5-MU-M GAINASP ERBIUM-DOPED SEMICONDUCTOR INJECTION-LASERS [J].
TSANG, WT ;
LOGAN, RA .
APPLIED PHYSICS LETTERS, 1986, 49 (25) :1686-1688
[10]   YB-DOPED INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
UWAI, K ;
NAKAGOME, H ;
TAKAHEI, K .
APPLIED PHYSICS LETTERS, 1987, 50 (15) :977-979