ELECTRON-MOBILITY IN IN0.53GA0.47AS QUANTUM WELLS

被引：7

作者：

CHATTOPADHYAY, D ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,POSTFACH 800665,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.38.13429

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：13429 / 13431

页数：3

共 25 条

[1] HIGH MOBILITY, SELECTIVELY DOPED INP GAINAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

AINA, L ;

MATTINGLY, M ;

POTTER, B .

APPLIED PHYSICS LETTERS, 1987, 51 (21) :1735-1737

[2] TRANSPORT AND PERSISTENT PHOTOCONDUCTIVITY IN INGAAS/INP SINGLE QUANTUM-WELLS [J].

ANDERSON, DA ;

BASS, SJ ;

KANE, MJ ;

TAYLOR, LL .

APPLIED PHYSICS LETTERS, 1986, 49 (20) :1360-1362

[3] SELF-CONSISTENT RESULTS FOR A GAAS/ALXGA1-XAS HETEROJUNCTION .2. LOW-TEMPERATURE MOBILITY [J].

ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (12) :3900-3907

[4] SELF-CONSISTENT CALCULATIONS OF CHARGE-TRANSFER AND ALLOY SCATTERING-LIMITED MOBILITY IN INP-GA1-XINXASYP1-Y SINGLE QUANTUM WELLS [J].

BRUM, JA ;

BASTARD, G .

SOLID STATE COMMUNICATIONS, 1985, 53 (08) :727-730

[5] POLAR OPTICAL-PHONON SCATTERING MOBILITY IN SEMICONDUCTOR QUANTUM-WELLS [J].

CHATTOPADHYAY, D .

PHYSICAL REVIEW B, 1986, 33 (10) :7288-7290

[6] ALLOY SCATTERING IN QUANTUM-WELL STRUCTURES OF SEMICONDUCTOR TERNARIES [J].

CHATTOPADHYAY, D .

PHYSICAL REVIEW B, 1985, 31 (02) :1145-1146

[7] PIEZOELECTRIC AND DEFORMATION POTENTIAL ACOUSTIC SCATTERING MOBILITY OF A TWO-DIMENSIONAL ELECTRON-GAS IN QUANTUM-WELLS [J].

CHATTOPADHYAY, D .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 135 (01) :409-413

[8] TIGHT-BINDING VIEW OF ALLOY SCATTERING IN III-V TERNARY SEMICONDUCTING ALLOYS [J].

FEDDERS, PA ;

MYLES, CW .

PHYSICAL REVIEW B, 1984, 29 (02) :802-807

[9] HEAVILY SI-DOPED INGAAS LATTICE-MATCHED TO INP GROWN BY MBE [J].

FUJII, T ;

INATA, T ;

ISHII, K ;

HIYAMIZU, S .

ELECTRONICS LETTERS, 1986, 22 (04) :191-192

[10]

HARRIS JJ, 1986, MICROSTRUCT, V2, P563

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