MULTIWAFER GROWTH OF CDTE ON GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION IN A VERTICAL, HIGH-SPEED, ROTATING-DISK REACTOR

被引：11

作者：

TOMPA, GS

NELSON, CR

SARACINO, MA

COLTER, PC

ANDERSON, PL

WRIGHT, WH

SCHMIT, JL

机构：

[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75265

[2] HONEYWELL INC,BLOOMINGTON,MN 55420

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 01期

关键词：

D O I：

10.1063/1.101754

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：62 / 64

页数：3

共 15 条

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[2]

[Anonymous], UNPUB

[3] THE ORGANOMETALLIC HETEROEPITAXY OF CDTE AND HGCDTE ON GAAS SUBSTRATES [J].

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[4] EFFECTS OF BOUNDARY-CONDITIONS ON THE FLOW AND HEAT-TRANSFER IN A ROTATING-DISK CHEMICAL VAPOR-DEPOSITION REACTOR [J].

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[6] COMPLEX FLOW PHENOMENA IN VERTICAL MOCVD REACTORS - EFFECTS ON DEPOSITION UNIFORMITY AND INTERFACE ABRUPTNESS [J].

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JENSEN, KF .

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[7] GROWTH AND PROPERTIES OF HG1-XCDXTE ON GAAS SUBSTRATES BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

GHANDHI, SK ;

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TASKAR, NR .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) :2253-2255

[8] METALORGANIC GROWTH OF CDTE AND HGCDTE EPITAXIAL-FILMS AT A REDUCED SUBSTRATE-TEMPERATURE USING DIISOPROPYLTELLURIDE [J].

HOKE, WE ;

LEMONIAS, PJ .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :398-400

[9] METALORGANIC GROWTH OF EPITAXIAL-FILMS OF CDTE AND HGCDTE ON SAPPHIRE SUBSTRATES [J].

HOKE, WE ;

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KORENSTEIN, R ;

LEMONIAS, PJ .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :276-278

[10]

NRADY JF, 1987, J FLUID MECH, V175, P363

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