DISLOCATION DENSITY REDUCTION BY ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS

被引：44

作者：

WALUKIEWICZ, W

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 20期

关键词：

D O I：

10.1063/1.101198

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2009 / 2011

页数：3

共 24 条

[1]

AOYOMA T, 1985, I PHYS C SER, V79, P19

[2] CRITICAL RESOLVED SHEAR-STRESS MEASUREMENTS FOR SILICON-DOPED GAAS SINGLE-CRYSTALS [J].

BOURRET, ED ;

TABACHE, MG ;

ELLIOT, AG .

APPLIED PHYSICS LETTERS, 1987, 50 (19) :1373-1375

[3]

BRICE JC, 1966, NATURE, V201, P1346

[4] NUCLEAR-MAGNETIC-RESONANCE MEASUREMENTS OF LATTICE-DISTORTIONS IN GAAS-IN [J].

CARLOS, WE ;

BISHOP, SG ;

TREACY, DJ .

APPLIED PHYSICS LETTERS, 1986, 49 (09) :528-530

[5] MECHANISM FOR DISLOCATION DENSITY REDUCTION IN GAAS CRYSTALS BY INDIUM ADDITION [J].

EHRENREICH, H ;

HIRTH, JP .

APPLIED PHYSICS LETTERS, 1985, 46 (07) :668-670

[6] TEMPERATURE-GRADIENTS, DOPANTS, AND DISLOCATION FORMATION DURING LOW-PRESSURE LEC GROWTH OF GAAS [J].

ELLIOT, AG ;

WEI, CL ;

VANDERWATER, DA .

JOURNAL OF CRYSTAL GROWTH, 1987, 85 (1-2) :59-68

[7] GROWTH AND OPTICAL-DEVICE EVALUATION OF P-TYPE CONDUCTIVE LEC GAAS CO-DOPED WITH IN AND ZN [J].

FUJII, T ;

FUKUDA, T .

JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (06) :405-409

[8] TEMPERATURE-DEPENDENCE FOR THE ONSET OF PLASTIC YIELD IN UNDOPED AND INDIUM-DOPED GAAS [J].

HOBGOOD, HM ;

MCGUIGAN, S ;

SPITZNAGEL, JA ;

THOMAS, RN .

APPLIED PHYSICS LETTERS, 1986, 48 (24) :1654-1655

[9] DISLOCATION-FREE GAAS AND INP CRYSTALS BY ISOELECTRONIC DOPING [J].

JACOB, G ;

DUSEAUX, M ;

FARGES, JP ;

VANDENBOOM, MMB ;

ROKSNOER, PJ .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) :417-424

[10] A THERMOELASTIC ANALYSIS OF DISLOCATION GENERATION IN PULLED GAAS CRYSTALS [J].

JORDAN, AS ;

CARUSO, R ;

VONNEIDA, AR .

BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (04) :593-637

← 1 2 3 →