MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY INSB

被引：51

作者：

MICHEL, E

SINGH, G

SLIVKEN, S

BESIKCI, C

BOVE, P

FERGUSON, I

RAZEGHI, M

机构：

[1] Center for Quantum Devices, Northwestern University, Evanston

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 26期

关键词：

D O I：

10.1063/1.112384

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395°C and a III/V incorporation ratio of 1:1.2 had an x-ray rocking curve of 158 arcsec and a Hall mobility of 92 300 cm2 V-1 at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date. © 1994 American Institute of Physics.

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页码：3338 / 3340

页数：3

相关论文

共 22 条

[1] ANOMALOUS HALL-EFFECT IN INSB LAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR DEPOSITION ON GAAS SUBSTRATES [J].

BESIKCI, C ;

CHOI, YH ;

SUDHARSANAN, R ;

RAZEGHI, M .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (10) :5009-5013

[2] GROWTH OF INSB ON GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

BIEFELD, RM ;

HEBNER, GA .

JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) :272-278

[3]

Choi Y. H., 1993, Semiconductor Heterostructures for Photonic and Electronic Applications Symposium, P375

[4] GROWTH OF INSB AND INAS1-XSBX ON GAAS BY MOLECULAR-BEAM EPITAXY [J].

CHYI, JI ;

KALEM, S ;

KUMAR, NS ;

LITTON, CW ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1988, 53 (12) :1092-1094

[5] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF INSB ON SI [J].

CHYI, JI ;

BISWAS, D ;

IYER, SV ;

KUMAR, NS ;

MORKOC, H ;

BEAN, R ;

ZANIO, K ;

LEE, HY ;

CHEN, H .

APPLIED PHYSICS LETTERS, 1989, 54 (11) :1016-1018

[6] MOLECULAR-BEAM EPITAXY GROWTH OF INSB FILMS ON GAAS [J].

DAVIS, JL ;

THOMPSON, PE .

APPLIED PHYSICS LETTERS, 1989, 54 (22) :2235-2237

[7] GROWTH AND OPTICAL CHARACTERIZATION OF INAS1-XSBX(0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) ON GAAS AND ON GAAS-COATED SI BY MOLECULAR-BEAM EPITAXY [J].

DOBBELAERE, W ;

DEBOECK, J ;

BORGHS, G .

APPLIED PHYSICS LETTERS, 1989, 55 (18) :1856-1858

[8] RHEED INTENSITY EFFECTS DURING THE GROWTH OF INAS, INSB AND IN(AS,SB) BY MOLECULAR-BEAM EPITAXY [J].

FERGUSON, IT ;

DEOLIVEIRA, AG ;

JOYCE, BA .

JOURNAL OF CRYSTAL GROWTH, 1992, 121 (03) :267-277

[9] HIGH-MOBILITY INSB GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

GASKILL, DK ;

STAUF, GT ;

BOTTKA, N .

APPLIED PHYSICS LETTERS, 1991, 58 (17) :1905-1907

[10] GROWTH-CHARACTERISTICS OF LPE INSB AND INGASB [J].

HOLMES, DE ;

KAMATH, GS .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (01) :95-110