MECHANISMS IN PLASMA ETCHING

被引：12

作者：

COBURN, JW

WINTERS, HF

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 02期

关键词：

D O I：

10.1116/1.569582

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：327 / 328

页数：2

共 17 条

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BONDUR, JA .

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[2] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J].

COBURN, JW ;

WINTERS, HF ;

CHUANG, TJ .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3532-3540

[3]

COBURN JW, 1977, 7TH P INT VAC C 3RD

[4]

COBURN JW, 1972, J APPL PHYS, V43, P4975

[5]

EPHRATH LM, 1977, J ELECTROCHEM SOC, V124, pC284

[6] EFFECT OF SECONDARY ELECTRONS AND NEGATIVE-IONS ON SPUTTERING OF FILMS [J].

HANAK, JJ ;

PELLICANE, JP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :406-409

[7] STUDY OF OPTICAL EMISSION FROM AN RF PLASMA DURING SEMICONDUCTOR ETCHING [J].

HARSHBARGER, WR ;

PORTER, RA ;

MILLER, TA ;

NORTON, P .

APPLIED SPECTROSCOPY, 1977, 31 (03) :201-207

[8] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J].

HEINECKE, RAH .

SOLID-STATE ELECTRONICS, 1975, 18 (12) :1146-1147

[9] NEW CHEMICAL DRY ETCHING [J].

HORIIKE, Y ;

SHIBAGAKI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 :13-18

[10]

Hosokawa N, 1974, JPN J APPL PHYS S, V13, P435

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