CUBIC BORON-NITRIDE FILMS SYNTHESIZED BY LOW-ENERGY ION-BEAM-ENHANCED VAPOR-DEPOSITION

被引：50

作者：

IKEDA, T

机构：

[1] Materials Research Laboratory, Kobe Steel, Ltd., Nishi-ku, Kobe, 651-22, 5-5

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 07期

关键词：

D O I：

10.1063/1.107798

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single phase-cubic boron nitride (cBN) films have been synthesized by means of the low-energy ion-beam-enhanced vapor deposition method. Cubic BN films were deposited at 4 nm min-1 by electron-beam evaporation of boron with N2+Ar ion beam bombardment under the energy range of 500-600 eV, at ion beam current density around 0.4 mA cm-2, and also, could be obtained in both cases with external rf or dc substrate biasing. The infrared spectra showed strong absorption at 1090 cm-1, which was shifted significantly towards a higher wave number due to the residual internal stress in the cBN films. High-resolution transmission electron microscopy of cBN films deposited showed that the microstructure consists of polycrystalline particles with a size of 10 nm.

引用

页码：786 / 788

页数：3

共 15 条

[1] FUNCTION OF SUBSTRATE BIAS POTENTIAL FOR FORMATION OF CUBIC BORON-NITRIDE FILMS IN PLASMA CVD TECHNIQUE [J].

CHAYAHARA, A ;

YOKOYAMA, H ;

IMURA, T ;

OSAKA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (09) :L1435-L1436

[2] MODIFICATION OF NIOBIUM FILM STRESS BY LOW-ENERGY ION-BOMBARDMENT DURING DEPOSITION [J].

CUOMO, JJ ;

HARPER, JME ;

GUARNIERI, CR ;

YEE, DS ;

ATTANASIO, LJ ;

ANGILELLO, J ;

WU, CT ;

HAMMOND, RH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :349-354

[3] GROWTH AND CHARACTERIZATION OF EPITAXIAL CUBIC BORON-NITRIDE FILMS ON SILICON [J].

DOLL, GL ;

SELL, JA ;

TAYLOR, CA ;

CLARKE, R .

PHYSICAL REVIEW B, 1991, 43 (08) :6816-6819

[4] LATTICE INFRARED SPECTRA OF BORON NITRIDE AND BORON MONOPHOSPHIDE [J].

GIELISSE, PJ ;

MITRA, SS ;

PLENDL, JN ;

GRIFFIS, RD ;

MANSUR, LC ;

MARSHALL, R ;

PASCOE, EA .

PHYSICAL REVIEW, 1967, 155 (03) :1039-&

[5] FORMATION OF CUBIC BORON-NITRIDE FILMS BY ARC-LIKE PLASMA-ENHANCED ION PLATING METHOD [J].

IKEDA, T ;

KAWATE, Y ;

HIRAI, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (04) :3168-3174

[6] FORMATION AND CHARACTERIZATION OF CUBIC BORON-NITRIDE FILMS BY AN ARC-LIKE PLASMA-ENHANCED ION PLATING METHOD [J].

IKEDA, T ;

SATOU, T ;

SATOH, H .

SURFACE & COATINGS TECHNOLOGY, 1991, 50 (01) :33-39

[7] PREPARATION OF CUBIC BORON-NITRIDE FILM BY ACTIVATED REACTIVE EVAPORATION WITH A GAS ACTIVATION NOZZLE [J].

INAGAWA, K ;

WATANABE, K ;

OHSONE, H ;

SAITOH, K ;

ITOH, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :2696-2700

[8] PREPARATION OF CUBIC BORON-NITRIDE FILMS BY RF-SPUTTERING [J].

MIENO, M ;

YOSHIDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (07) :L1175-L1177

[9] ULTRAVIOLET LIGHT-EMITTING DIODE OF A CUBIC BORON-NITRIDE PN JUNCTION MADE AT HIGH-PRESSURE [J].

MISHIMA, O ;

ERA, K ;

TANAKA, J ;

YAMAOKA, S .

APPLIED PHYSICS LETTERS, 1988, 53 (11) :962-964

[10] THE STRUCTURE AND PROPERTIES OF ION-BEAM-SYNTHESIZED BORON-NITRIDE FILMS [J].

SAINTY, WG ;

MARTIN, PJ ;

NETTERFIELD, RP ;

MCKENZIE, DR ;

COCKAYNE, DJH ;

DWARTE, DM .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) :3980-3986

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