DEVELOPMENT OF ANISOTROPIC MICROTWIN DISTRIBUTIONS IN GAAS GROWN ON 4-DEGREES-OFF (001) SI BY MOLECULAR-BEAM EPITAXY

被引：12

作者：

WEI, XL

AINDOW, M

机构：

[1] Beijing Laboratory of Electron Microscopy, Chinese Academy of Sciences, Beijing 100080

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 15期

关键词：

D O I：

10.1063/1.112834

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transmission electron microscopy has been used to confirm that the microtwins in GaAs grown on 4-degrees-off (001) Si by molecular beam epitaxy form preferentially on one of the {111} planes. A Schmid factor analysis of the stresses in the deposit shows that the favored plane is the one on which the resolved shear stress is highest, supporting a deformation twinning model for twin formation in two dimensional growth of GaAs on offcut Si substrates. (C) 1994 American Institute of Physics.

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页码：1903 / 1905

页数：3

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