ASYMMETRIC DISTRIBUTION OF MICROTWINS IN A GAAS/SI HETEROSTRUCTURE GROWN BY MOLECULAR-BEAM EPITAXY

被引：5

作者：

XIE, QH ^{[1
]}

FUNG, KK ^{[1
]}

DING, AJ ^{[1
]}

CAI, LH ^{[1
]}

HUANG, Y ^{[1
]}

ZHOU, JM ^{[1
]}

机构：

[1] CHINESE ACAD SCI,BEIJING LAB ELECTRON MICROSCOPY,BEIJING 100080,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 26期

关键词：

D O I：

10.1063/1.103792

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The distribution of microtwins in GaAS epilayer grown on Si (001) substrates tilted towards the [1BAR11] direction by molecular beam epitaxy has been studied by transmission electron microscopy. An asymmetric distribution of microtwins attributed to substrate misorientation and two-dimensional (2D) growth mode has been found. Orthogonal [1BAR10] and [110] cross sections are identified by the angle of tilt in large-angle convergent beam electron diffraction Tanaka patterns [J. Electron. Microsc. 29, 408 (1980)] taken across the GaAs/Si interface. It is found that (1BAR11) microtwins are preferentially grown in GaAs epilayers on a tilted Si (001) substrate where the growth mode is 2D, while symmetrical (111BAR) and (111) twins are observed when there is a reversal of twin distribution and the growth mode is 3D.

引用

页码：2803 / 2805

页数：3

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