FREQUENCY-DEPENDENCE OF ELECTRON CONDUCTIVITY IN SILICON INVERSION LAYER IN METALLIC AND LOCALIZED REGIMES - COMMENT

被引：5

作者：

ARNOLD, E

机构：

来源：

PHYSICAL REVIEW B | 1978年 / 17卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.17.4111

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4111 / 4113

页数：3

共 16 条

[1] FREQUENCY-DEPENDENCE OF ELECTRON CONDUCTIVITY IN SILICON INVERSION LAYER IN METALLIC AND LOCALIZED REGIMES [J].

ALLEN, SJ ;

TSUI, DC ;

DEROSA, F .

PHYSICAL REVIEW LETTERS, 1975, 35 (20) :1359-1362

[2] DISORDER-INDUCED CARRIER LOCALIZATION IN SILICON SURFACE INVERSION LAYERS [J].

ARNOLD, E .

APPLIED PHYSICS LETTERS, 1974, 25 (12) :705-707

[3] ANOMALOUS HALL-EFFECT AND CARRIER TRANSPORT IN BANDTAILS AT SI-SIO-2 INTERFACE [J].

ARNOLD, E ;

SHANNON, JM .

SOLID STATE COMMUNICATIONS, 1976, 18 (9-10) :1153-1156

[4] CONDUCTION MECHANISMS IN BANDTAILS AT SI-SIO2 INTERFACE [J].

ARNOLD, E .

SURFACE SCIENCE, 1976, 58 (01) :60-70

[5] SCATTERING OF CHARGE-CARRIERS IN SILICON SURFACE-LAYERS [J].

CHENG, YC ;

SULLIVAN, EA .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) :923-925

[6]

HENZLER M, 1976, 13TH P INT C PHYS SE, P669

[7] CLASSICAL TRANSPORT IN DISORDERED MEDIA - SCALING AND EFFECTIVE-MEDIUM THEORIES [J].

KIRKPATRICK, S .

PHYSICAL REVIEW LETTERS, 1971, 27 (25) :1722-+

[8]

Marcuvitz N., 1951, WAVEGUIDE HDB, P218

[9] ANDERSON TRANSITION [J].

MOTT, N ;

PEPPER, M ;

POLLITT, S ;

WALLIS, RH ;

ADKINS, CJ .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1975, 345 (1641) :169-205

[10] NEW MODEL FOR INTERFACE CHARGE-CARRIER MOBILITY - ROLE OF MISFIT DISLOCATIONS [J].

NEUMARK, GF .

PHYSICAL REVIEW LETTERS, 1968, 21 (17) :1252-+

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