DIFFUSION OF NICKEL IN AMORPHOUS SILICON DIOXIDE AND SILICON NITRIDE FILMS

被引：46

作者：

GHOSHTAGORE, RN

机构：

[1] Westinghouse Research Laboratories, Pittsburgh

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 11期

关键词：

D O I：

10.1063/1.1657201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nickel-59 radiotracer has been used to determine nickel diffusion coefficients in amorphous silicon dioxide and silicon nitride films between 1100° and 1490°K. Nickel distribution has been found to be Fickian with the calculated diffusivities obeying Arrhenius equation. Long diffusion times have been found to produce anomalous diffusivities in silicon nitride. © 1969 The American Institute of Physics.

引用

页码：4374 / +

页数：1

共 13 条

[1] BADALOV AZ, 1968, SOV PHYS SEMICOND+, V2, P615
[2] GOLD DIFFUSIVITIES IN SIO2 AND SI USING MOS STRUCTURE - (800 TO 1200 DEGREES C - IMPURITY EFFECTS - BULK VS SURFACE DIFFUSION - E/T)
COLLINS, DR
SCHRODER, DK
SAH, CT
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (12) : 323 - &
[3] STRUCTURE AND SODIUM MIGRATION IN SILICON NITRIDE FILMS
DALTON, JV
DROBEK, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) : 865 - +
[4] ELECTRIC FIELDS AT SURFACE AND INTERFACE OF SIO2 FILMS ON SILICON
FOWKES, FM
BURGESS, TE
[J]. SURFACE SCIENCE, 1969, 13 (01) : 184 - &
[5] DISTRIBUTION OF SODIUM IN SILICON NITRIDE
FRANZ, I
LANGHEIN.W
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (03) : 145 - &
[6] AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES
HOFSTEIN, SR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) : 222 - +
[7] HORIUCHI S, 1962, 12 OS U TECHN REP, P265
[8] KOVARSKI.VY, 1968, FIZ TVERD TELA+, V10, P209
[9] DIFFUSION OF PHOSPHORUS IN SILICON OXIDE FILM
SAH, CT
SELLO, H
TREMERE, DA
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (3-4) : 288 - 298
[10] ION TRANSPORT PHENOMENA IN INSULATING FILMS
SNOW, EH
GROVE, AS
DEAL, BE
SAH, CT
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1664 - &

← 1 2 →