NEW TECHNIQUE FOR THE CHARACTERIZATION OF SI SIGE LAYERS USING HETEROSTRUCTURE MOS CAPACITORS

被引：46

作者：

VOINIGESCU, SP ^{[1
]}

INIEWSKI, K ^{[1
]}

LISAK, R ^{[1
]}

SALAMA, CAT ^{[1
]}

NOEL, JP ^{[1
]}

HOUGHTON, DC ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 08期

关键词：

D O I：

10.1016/0038-1101(94)90157-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a comprehensive on-line electrical characterization technique addressing the emerging Si/SiGe MOS technology. It demonstrates that the experimental high frequency and low frequency C-V characteristics of Si/SiGe heterostructure MOS capacitors can provide accurate material-, process-, and device-related information such as: the valence band offset. Si cap layer thickness, substrate doping, and MOSFET threshold voltages.

引用

页码：1491 / 1501

页数：11

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