DEEP LEVELS IN UNDOPED SI1-XGEX GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：4

作者：

LI, SH

BHATTACHARYA, PK

CHUNG, SW

SMITH, SR

MITCHELL, WC

机构：

[1] UNIV DAYTON,RES INST,DAYTON,OH 45469

[2] WRIGHT LAB,MAT DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 01期

关键词：

DEEP LEVELS; GAS-SOURCE MOLECULAR BEAM EPITAXY; SILICON-GERMANIUM ALLOYS;

D O I：

10.1007/BF02665738

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Deep levels have been identified and characterized in undoped Si1-xGex alloys grown on silicon substrates by gas-source molecular beam epitaxy. Hole traps in the p-type layers have activation energies ranging from 0.029-0.45 eV and capture cross sections (sigma(infinity)) ranging from 10(-9) to 10(-20) cm2. Possible origins of these centers are discussed.

引用

页码：151 / 153

页数：3

共 7 条

[1] SILICON MOLECULAR-BEAM EPITAXY - 1984-1986 [J].