CHARGE DYNAMICS IN HETEROSTRUCTURE SCHOTTKY-GATE CAPACITORS AND THEIR INFLUENCE ON THE TRANSCONDUCTANCE AND LOW-FREQUENCY CAPACITANCE OF MODFETS

被引：6

作者：

VOINIGESCU, S ^{[1
]}

MULLER, A ^{[1
]}

机构：

[1] RES & DEV CTR ELECTR COMPONENTS,BUCHAREST 72996,ROMANIA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 10期

关键词：

D O I：

10.1109/16.40917

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2320 / 2327

页数：8

共 22 条

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