APPLICATION OF FACTOR-ANALYSIS TO AUGER CRATER-EDGE PROFILING

被引：12

作者：

GATTS, C

LOSCH, W

机构：

[1] Laboratorio de Estudos de Materials e Interfaces, COPPE, Universidade Federal do Rio de Janeiro, 21945 Rio de Janeiro

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1991年 / 9卷 / 06期

关键词：

D O I：

10.1116/1.577159

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Factor analysis is applied to the Auger crater-edge profile of a palladium/hydrogenated amorphous silicon layered structure. The results show, apart of a considerable improvement in interface determination, new information not obtainable by the conventional Auger depth profiling technique, which makes this procedure extremely useful for thin film depth profiling.

引用

页码：2982 / 2985

页数：4

共 10 条

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