MECHANISM OF SINXHY DEPOSITION FROM N2-SIH4 PLASMA

被引：86

作者：

SMITH, DL

ALIMONDA, AS

VONPREISSIG, FJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 03期

关键词：

D O I：

10.1116/1.585008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：551 / 557

页数：7

共 17 条

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[8] PERMEATION OF HYDROGEN INTO SILICON DURING LOW-ENERGY HYDROGEN-ION BEAM BOMBARDMENT [J].

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[9] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE [J].

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