SIN MEMBRANE MASKS FOR X-RAY-LITHOGRAPHY

被引：16

作者：

SUZUKI, K ^{[1
]}

MATSUI, J ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,OPTO ELECTR RES LAB,TAKATSU KU,KAWASAKI 213,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 02期

关键词：

D O I：

10.1116/1.571355

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：191 / 194

页数：4

共 14 条

[1]

BASSOUS E, 1976, SOLID STATE TECHNOL, V19, P55

[2] FABRICATION OF SILICON MOS DEVICES USING X-RAY LITHOGRAPHY [J].

BERNACKI, SE ;

SMITH, HI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (07) :421-428

[3] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J].

BRANTLEY, WA .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :534-535

[4] INTERNAL STRESSES IN MULTILAYERED STRUCTURES [J].

GHATE, PB ;

HALL, LH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) :491-&

[5]

Hoffman R. W., 1966, PHYS THIN FILMS, VVol. 3, pp. 211

[6] RESIDUAL-STRESS IN SILICON-NITRIDE FILMS [J].

IRENE, EA .

JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (03) :287-298

[7]

MAR KM, 1980, SOLID STATE TECHNOL, V23, P137

[8]

MIMURA Y, 1976, 1976 P NAT CONV I EL, V2, P2

[9] ELASTIC STIFFNESS AND THERMAL-EXPANSION COEFFICIENTS OF VARIOUS REFRACTORY SILICIDES AND SILICON-NITRIDE FILMS [J].

RETAJCZYK, TF ;

SINHA, AK .

THIN SOLID FILMS, 1980, 70 (02) :241-247

[10] REACTIVE PLASMA DEPOSITED SI-N FILMS FOR MOS-LSI PASSIVATION [J].

SINHA, AK ;

LEVINSTEIN, HJ ;

SMITH, TE ;

QUINTANA, G ;

HASZKO, SE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) :601-608

← 1 2 →