A RECESSED-GATE IN0.52AL0.48AS/N+-IN0.53GA0.47AS MIS-TYPE FET

被引：7

作者：

DELALAMO, JA ^{[1
]}

MIZUTANI, T ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, ATSUGI ELECT COMMUN LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 04期

关键词：

D O I：

10.1109/16.22469

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：646 / 650

页数：5

共 18 条

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[8] AN INVESTIGATION OF I-ALGAAS/N-GAAS DOPED-CHANNEL MIS-LIKE FETS (DMTS) - PROPERTIES AND PERFORMANCE POTENTIALITIES [J].

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