REACTIVELY SPUTTERED TITANIUM NITRIDE FILMS FOR SUBMICRON CONTACT BARRIER METALLIZATION

被引：15

作者：

DIXIT, GA ^{[1
]}

WEI, CC ^{[1
]}

LIOU, FT ^{[1
]}

ZHANG, H ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,DEPT MAT SCI,EVANSTON,IL 60208

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 04期

关键词：

D O I：

10.1063/1.109644

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Titanium nitride (TiN) is widely used as a barrier metal for submicron metallization because of its superior thermal stability. Various methods of forming TiN films have been explored. Oxygen passivation of the grain boundaries of the TiN and stoichiometry of the TiN are reported to be the dominant factors in achieving good barrier properties. We report on the structure property correlation of the TiN barrier metal films.

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页码：357 / 359

页数：3

相关论文

共 15 条

[1]

AHA KY, 1983, THIN SOLID FILMS, V107, P45

[2]

ARONSON A, 1988, ADV MAGNETRON SPUTTE

[3] PHASE-EQUILIBRIA IN THIN-FILM METALLIZATIONS [J].

BEYERS, R ;

SINCLAIR, R ;

THOMAS, ME .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04) :781-784

[4] CHARACTERIZATION OF TITANIUM NITRIDE FILMS SPUTTER DEPOSITED FROM A HIGH-PURITY TITANIUM NITRIDE TARGET [J].

BRAT, T ;

PARIKH, N ;

TSAI, NS ;

SINHA, AK ;

POOLE, J ;

WICKERSHAM, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06) :1741-1747

[5]

GONZALES S, 1991, P IEEE VLSI MULTILEV, P316

[6] FORMATION OF TITANIUM NITRIDE LAYERS BY THE NITRIDATION OF TITANIUM IN HIGH-PRESSURE AMMONIUM AMBIENT [J].

HARA, T ;

TANI, K ;

INOUE, K ;

NAKAMURA, S ;

MURAI, T .

APPLIED PHYSICS LETTERS, 1990, 57 (16) :1660-1662

[7] PERFORMANCE AND FAILURE MECHANISMS OF TIN DIFFUSION BARRIER LAYERS IN SUB-MICRON DEVICES [J].

KOHLHASE, A ;

MANDL, M ;

PAMLER, W .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) :2464-2469

[8] A HIGHLY RELIABLE INTERCONNECTION FOR A BF2+-IMPLANTED JUNCTION UTILIZING A TIN/TI BARRIER METAL SYSTEM [J].

MAEDA, T ;

NAKAYAMA, T ;

SHIMA, S ;

MATSUNAGA, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (03) :599-606

[9] TISI2/TIN - A STABLE MULTILAYERED CONTACT STRUCTURE FOR SHALLOW IMPLANTED JUNCTIONS IN VLSI TECHNOLOGY [J].

NORSTROM, H ;

DONCHEV, T ;

OSTLING, M ;

PETERSSON, CS .

PHYSICA SCRIPTA, 1983, 28 (06) :633-636

[10]

RAAIMMAKERS IJ, 1990, UNPUB P IEEE VLSI MU, P219