共 15 条
[1]
HIGH-TEMPERATURE NUCLEATION AND SILICIDE FORMATION AT THE CO/SI(111)-7X7 INTERFACE - A STRUCTURAL INVESTIGATION
[J].
PHYSICAL REVIEW B,
1986, 34 (02)
:913-920
[3]
KINETICS OF FORMATION AND PROPERTIES OF EPITAXIAL COSI2 FILMS ON SI (111)
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1985, 3 (02)
:770-773
[7]
HUNT BD, 1986, MATER RES SOC S P, V56, P151
[8]
UNIFORMITY AND CRYSTALLINE QUALITY OF COSI2/SI HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY AND REACTIVE DEPOSITION EPITAXY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1985, 3 (02)
:596-599
[10]
SURFACE-STRUCTURE OF EPITAXIAL COSI2 CRYSTALS GROWN ON SI(111)
[J].
PHYSICAL REVIEW B,
1986, 33 (06)
:4108-4113