MOLECULAR-BEAM EPITAXIAL-GROWTH OF SI ON COSI2 SUBSTRATES

被引：6

作者：

DITCHEK, BM

SALERNO, JP

GORMLEY, JV

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 11期

关键词：

D O I：

10.1063/1.96327

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1200 / 1202

页数：3

共 8 条

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[7] UNIFORMITY AND CRYSTALLINE QUALITY OF COSI2/SI HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY AND REACTIVE DEPOSITION EPITAXY [J].

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[8] A PROPOSED HIGH-FREQUENCY HIGH-POWER SILICON-SILICIDE MULTILAYERED DEVICE [J].

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