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A PROPOSED HIGH-FREQUENCY HIGH-POWER SILICON-SILICIDE MULTILAYERED DEVICE
被引:3
作者
:
WANG, KL
论文数:
0
引用数:
0
h-index:
0
WANG, KL
LI, GP
论文数:
0
引用数:
0
h-index:
0
LI, GP
机构
:
来源
:
IEEE ELECTRON DEVICE LETTERS
|
1983年
/ 4卷
/ 12期
关键词
:
D O I
:
10.1109/EDL.1983.25796
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:444 / 446
页数:3
相关论文
共 11 条
[1]
SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
[J].
BEAN, JC
论文数:
0
引用数:
0
h-index:
0
BEAN, JC
;
POATE, JM
论文数:
0
引用数:
0
h-index:
0
POATE, JM
.
APPLIED PHYSICS LETTERS,
1980,
37
(07)
:643
-646
[2]
ORIENTATION DEPENDENCE OF NORMAL-TYPE GAAS INTRINSIC AVALANCHE RESPONSE-TIME
[J].
BERENZ, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
BERENZ, JJ
;
KINOSHITA, J
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
KINOSHITA, J
;
HIERL, TL
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
HIERL, TL
;
LEE, CA
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
LEE, CA
.
ELECTRONICS LETTERS,
1979,
15
(05)
:150
-152
[3]
SHARP PROFILES WITH HIGH AND LOW DOPING LEVELS IN SILICON GROWN BY MOLECULAR-BEAM EPITAXY
[J].
IYER, SS
论文数:
0
引用数:
0
h-index:
0
IYER, SS
;
METZGER, RA
论文数:
0
引用数:
0
h-index:
0
METZGER, RA
;
ALLEN, FG
论文数:
0
引用数:
0
h-index:
0
ALLEN, FG
.
JOURNAL OF APPLIED PHYSICS,
1981,
52
(09)
:5608
-5613
[4]
SATURATION CURRENT AND LARGE-SIGNAL OPERATION OF A READ DIODE
[J].
MISAWA, T
论文数:
0
引用数:
0
h-index:
0
MISAWA, T
.
SOLID-STATE ELECTRONICS,
1970,
13
(10)
:1363
-&
[5]
PAN DS, 1982, JUN P WORKSH PHYS SU
[6]
DOUBLE HETEROEPITAXY IN THE SI (111)-COSI2-SI STRUCTURE
[J].
SAITOH, S
论文数:
0
引用数:
0
h-index:
0
SAITOH, S
;
ISHIWARA, H
论文数:
0
引用数:
0
h-index:
0
ISHIWARA, H
;
FURUKAWA, S
论文数:
0
引用数:
0
h-index:
0
FURUKAWA, S
.
APPLIED PHYSICS LETTERS,
1980,
37
(02)
:203
-205
[7]
CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS
[J].
SHANNON, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
SHANNON, JM
.
SOLID-STATE ELECTRONICS,
1976,
19
(06)
:537
-543
[8]
CURRENT TRANSPORT IN METAL-SEMICONDUCTOR-METAL (MSM) STRUCTURES
[J].
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
;
COLEMAN, DJ
论文数:
0
引用数:
0
h-index:
0
COLEMAN, DJ
;
LOYA, A
论文数:
0
引用数:
0
h-index:
0
LOYA, A
.
SOLID-STATE ELECTRONICS,
1971,
14
(12)
:1209
-&
[9]
SZE SM, 1982, PHYSICS SEMICONDUCTO
[10]
EPITAXIAL SILICIDES
[J].
TUNG, RT
论文数:
0
引用数:
0
h-index:
0
TUNG, RT
;
POATE, JM
论文数:
0
引用数:
0
h-index:
0
POATE, JM
;
BEAN, JC
论文数:
0
引用数:
0
h-index:
0
BEAN, JC
;
GIBSON, JM
论文数:
0
引用数:
0
h-index:
0
GIBSON, JM
;
JACOBSON, DC
论文数:
0
引用数:
0
h-index:
0
JACOBSON, DC
.
THIN SOLID FILMS,
1982,
93
(1-2)
:77
-90
←
1
2
→
共 11 条
[1]
SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
[J].
BEAN, JC
论文数:
0
引用数:
0
h-index:
0
BEAN, JC
;
POATE, JM
论文数:
0
引用数:
0
h-index:
0
POATE, JM
.
APPLIED PHYSICS LETTERS,
1980,
37
(07)
:643
-646
[2]
ORIENTATION DEPENDENCE OF NORMAL-TYPE GAAS INTRINSIC AVALANCHE RESPONSE-TIME
[J].
BERENZ, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
BERENZ, JJ
;
KINOSHITA, J
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
KINOSHITA, J
;
HIERL, TL
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
HIERL, TL
;
LEE, CA
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
LEE, CA
.
ELECTRONICS LETTERS,
1979,
15
(05)
:150
-152
[3]
SHARP PROFILES WITH HIGH AND LOW DOPING LEVELS IN SILICON GROWN BY MOLECULAR-BEAM EPITAXY
[J].
IYER, SS
论文数:
0
引用数:
0
h-index:
0
IYER, SS
;
METZGER, RA
论文数:
0
引用数:
0
h-index:
0
METZGER, RA
;
ALLEN, FG
论文数:
0
引用数:
0
h-index:
0
ALLEN, FG
.
JOURNAL OF APPLIED PHYSICS,
1981,
52
(09)
:5608
-5613
[4]
SATURATION CURRENT AND LARGE-SIGNAL OPERATION OF A READ DIODE
[J].
MISAWA, T
论文数:
0
引用数:
0
h-index:
0
MISAWA, T
.
SOLID-STATE ELECTRONICS,
1970,
13
(10)
:1363
-&
[5]
PAN DS, 1982, JUN P WORKSH PHYS SU
[6]
DOUBLE HETEROEPITAXY IN THE SI (111)-COSI2-SI STRUCTURE
[J].
SAITOH, S
论文数:
0
引用数:
0
h-index:
0
SAITOH, S
;
ISHIWARA, H
论文数:
0
引用数:
0
h-index:
0
ISHIWARA, H
;
FURUKAWA, S
论文数:
0
引用数:
0
h-index:
0
FURUKAWA, S
.
APPLIED PHYSICS LETTERS,
1980,
37
(02)
:203
-205
[7]
CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS
[J].
SHANNON, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
SHANNON, JM
.
SOLID-STATE ELECTRONICS,
1976,
19
(06)
:537
-543
[8]
CURRENT TRANSPORT IN METAL-SEMICONDUCTOR-METAL (MSM) STRUCTURES
[J].
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
;
COLEMAN, DJ
论文数:
0
引用数:
0
h-index:
0
COLEMAN, DJ
;
LOYA, A
论文数:
0
引用数:
0
h-index:
0
LOYA, A
.
SOLID-STATE ELECTRONICS,
1971,
14
(12)
:1209
-&
[9]
SZE SM, 1982, PHYSICS SEMICONDUCTO
[10]
EPITAXIAL SILICIDES
[J].
TUNG, RT
论文数:
0
引用数:
0
h-index:
0
TUNG, RT
;
POATE, JM
论文数:
0
引用数:
0
h-index:
0
POATE, JM
;
BEAN, JC
论文数:
0
引用数:
0
h-index:
0
BEAN, JC
;
GIBSON, JM
论文数:
0
引用数:
0
h-index:
0
GIBSON, JM
;
JACOBSON, DC
论文数:
0
引用数:
0
h-index:
0
JACOBSON, DC
.
THIN SOLID FILMS,
1982,
93
(1-2)
:77
-90
←
1
2
→