A COMPARATIVE-STUDY OF THE ADSORPTION OF CH2CL2, CH3L AND CH2L2 ON GAAS(100) SURFACES AT 300 K

被引:3
作者
FRANCIS, SM
GOULDING, PA
PEMBLE, ME
机构
[1] Dept of Chemistry, University of Manchester Institute of Science and Technology, Manchester, M60 1QD, Sackville St
关键词
D O I
10.1016/0042-207X(90)93819-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
It is demonstrated that CH2Cl2, CH3l and CH2l2 adsorb on a clean As-rich GaAs(100) substrate surface at 300 K. The reactivity of these species towards the GaAs(100) surface follows the order CH2Cl2 < CH3l < CH2l2 with the l-containing species producing marked As-depletion. The implications of these data for the design of laser-assisted, selective-area etching processes are discussed. © 1990.
引用
收藏
页码:909 / 911
页数:3
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