ON THE UNDERSTANDING OF ELECTRON AND HOLE MOBILITY MODELS FROM ROOM TO LIQUID-HELIUM TEMPERATURES

被引：17

作者：

EMRANI, A

BALESTRA, F

GHIBAUDO, G

机构：

[1] Laboratoire de Physique des Composants à Semiconducteurs, URA CNRS, ENSERG, 38016 Grenoble, 23 rue des martyrs

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 10期

关键词：

D O I：

10.1016/0038-1101(94)90219-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of the scattering processes on the mobility behavior in si MOSFETs operated from room to liquid helium temperatures is studied. In particular, the role of the Coulomb and surface roughness mechanisms owing to Fowler-Nordheim stress and bulk bias effects is underlined. This enables us to propose reliable mobility models applicable in the room, liquid nitrogen and liquid helium temperature ranges and to enlighten the physical parameters which are hidden behind the analytical models. This modeling is very useful for the simulation of the MOSFET electrical properties under room and cryogenic operations.

引用

页码：1723 / 1730

页数：8

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