MODEL FOR NON-EQUILIBRIUM SEGREGATION DURING PULSED LASER ANNEALING

被引：78

作者：

WOOD, RF

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 03期

关键词：

D O I：

10.1063/1.91914

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：302 / 304

页数：3

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[11] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON
TRUMBORE, FA
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01): : 205 - 233
[12] THEORETICAL-ANALYSIS OF THERMAL AND MASS-TRANSPORT IN ION-IMPLANTED LASER-ANNEALED SILICON
WANG, JC
WOOD, RF
PRONKO, PP
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 455 - 458
[13] LASER ANNEALING OF ION-IMPLANTED SEMICONDUCTORS
WHITE, CW
NARAYAN, J
YOUNG, RT
[J]. SCIENCE, 1979, 204 (4392) : 461 - 468
[14] SUPERSATURATED SUBSTITUTIONAL ALLOYS FORMED BY ION-IMPLANTATION AND PULSED LASER ANNEALING OF GROUP-III AND GROUP-V DOPANTS IN SILICON
WHITE, CW
WILSON, SR
APPLETON, BR
YOUNG, FW
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 738 - 749
[15] ELECTRICAL AND STRUCTURAL CHARACTERISTICS OF LASER-INDUCED EPITAXIAL LAYERS IN SILICON
YOUNG, RT
NARAYAN, J
WOOD, RF
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (06) : 447 - 449