PROCESS STUDY OF SILICON-CARBIDE COATINGS DEPOSITED ON STEEL BY PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION FROM TETRAMETHYLSILANE-ARGON GAS SYSTEM

被引:17
作者
ZHANG, W [1 ]
LELOGEAIS, M [1 ]
DUCARROIR, M [1 ]
机构
[1] UNIV PERPIGNAN,CNRS,INST SCI & GENIE MAT & PROCEDES,F-66860 PERPIGNAN,FRANCE
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 12A期
关键词
SILICON CARBIDE; PACVD; SI(CH3)4-AR; DEPOSITION RATE; KINETIC PARAMETER; PLASMA PROCESS;
D O I
10.1143/JJAP.31.4053
中图分类号
O59 [应用物理学];
学科分类号
摘要
Silicon carbide coatings were prepared in an RF plasma-assisted chemical vapor deposition (CVD) device from the tetramethylsilane-argon gas system. The present paper is devoted to investigation of the plasma process and determination of the deposition rate with the experimental parameters. By employing the general convective diffusion equation, we obtain a simple analytical expression of the deposition rate. Calculated results are compared with experimental data. The agreement between calculated and measured results as functions of total pressure, total flow rate, reactant composition, and plasma geometry is fairly good. The kinetic parameters selected are found to have a reasonable order of magnitude in comparison to those of other studies.
引用
收藏
页码:4053 / 4060
页数:8
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