SELECTIVE EPITAXIAL-GROWTH BY RAPID THERMAL-PROCESSING

被引：7

作者：

LEE, SK

KU, YH

HSIEH, TY

JUNG, K

KWONG, DL

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 03期

关键词：

D O I：

10.1063/1.103712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Rapid thermal processing chemical vapor deposition was employed for selective epitaxial growth of silicon. Defect-free epitaxial islands were grown into oxide windows with 〈110〉 sidewall orientation on (100) silicon substrates. The effects of growth temperature on the degree of faceting have been studied. The hydrogen prebake temperatures as low as 1000°C have proven to be sufficient for high quality Si deposition without sidewall oxide undercutting.

引用

页码：273 / 275

页数：3

共 11 条

[1]

BORLAND JO, 1985, SOLID STATE TECHNOL, V28, P141

[2]

BORLAND JO, 1987, IEDM TECH DIG, V12

[3] MODEL FOR FACET AND SIDEWALL DEFECT FORMATION DURING SELECTIVE EPITAXIAL-GROWTH OF (001) SILICON [J].