RESISTANCE DECAY AFTER ELECTROMIGRATION AS THE EFFECT OF MECHANICAL-STRESS RELAXATION

被引：5

作者：

BALDINI, GL

SCORZONI, A

TAMARRI, F

机构：

[1] CNR-Istituto LAMEL, I-40126 Bologna

来源：

MICROELECTRONICS AND RELIABILITY | 1993年 / 33卷 / 11-12期

关键词：

D O I：

10.1016/0026-2714(93)90089-H

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Resistance decay has been observed in Aluminum narrow lines when the high stressing current in electromigration tests is turned off. It has been interpreted as the consequence of the relaxation of electromigration-induced mechanical stress.

引用

页码：1841 / 1844

页数：4

共 13 条

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