RAPID THERMAL PROCESSED THIN-FILMS OF REACTIVELY SPUTTERED TA2O5

被引:96
作者
PIGNOLET, A
RAO, GM
KRUPANIDHI, SB
机构
[1] PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802
[2] INDIAN INST SCI,BANGALORE 560012,KARNATAKA,INDIA
关键词
AMORPHOUS MATERIALS; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES AND MEASUREMENTS; SPUTTERING;
D O I
10.1016/0040-6090(94)06322-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Rapid thermal processed thin films of reactively sputtered tantalum pentoxide Ta2O5 thin films have been deposited on silicon and platinum coated silicon substrates by reactive magnetron sputtering. The as-deposited films were amorphous and showed good electrical properties in terms of a dielectric permittivity of about 24 and leakage current density of 9 x 10(-8) A cm(-2). A rapid thermal annealing process at temperatures above 700 degrees C crystallized the films, increased the dielectric relative permittivity, and decreased the leakage current. The dielectric constant for a film rapidly annealed at 850 degrees C increased to 45 and its leakage current density lowered to 2 x 10(-8) A cm(-2). The dielectric measurements in the MIS configuration showed that Ta2O5 might be used as a dielectric material instead of SiO2 or Si3N4 for integrated devices. The current voltage characteristics observed at low and high fields suggested different conduction mechanisms.
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页码:230 / 235
页数:6
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