AUGER SPUTTER PROFILING STUDIES OF SIO2 GROWN IN O2-HCL MIXTURES

被引：5

作者：

ROUSE, JW ^{[1
]}

HELMS, CR ^{[1
]}

DEAL, BE ^{[1
]}

RAZOUK, RR ^{[1
]}

机构：

[1] FAIRCHILD CAMERA & INSTRUMENT CORP,RES & DEV LAB,PALO ALTO,CA 94304

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.570966

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：971 / 972

页数：2

共 17 条

[1]

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[10] PHASE-SEPARATION AND SODIUM PASSIVATION IN SILICON-OXIDES GROWN IN HCI-O2 AMBIENTS [J].

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