ANALYSIS AND CHARACTERIZATION OF THE DEPLETION-MODE IGFET

被引：39

作者：

ELMANSY, YA ^{[1
]}

机构：

[1] BELL NO RES,OTTAWA K1Y 4H7,ONTARIO,CANADA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1980年 / 15卷 / 03期

关键词：

D O I：

10.1109/JSSC.1980.1051395

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：331 / 340

页数：10

共 13 条

[1]

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[2]

BLOUSCHILD RA, 1978 IEEE ISSC DIG T, P50

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[5] N-CHANNEL ION-IMPLANTED ENHANCEMENT-DEPLETION FET CIRCUIT AND FABRICATION TECHNOLOGY [J].

FORBES, L .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (03) :226-230

[6] ANALYSIS OF DEEP DEPLETION MOSFET AND USE OF DC CHARACTERISTICS FOR DETERMINING BULK-CHANNEL CHARGE-COUPLED DEVICE PARAMETERS [J].

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SOLID-STATE ELECTRONICS, 1978, 21 (05) :753-761

[7] MOS SAMPLED DATA RECURSIVE FILTERS USING SWITCHED CAPACITOR INTEGRATORS [J].

HOSTICKA, BJ ;

BRODERSEN, RW ;

GRAY, PR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (06) :600-608

[8] MODELING OF AN ION-IMPLANTED SILICON-GATE DEPLETION-MODE IGFET [J].

HUANG, JST ;

TAYLOR, GW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :995-1001

[9]

KNEPPER RW, 1978 IEEE ISSC DIG T, P16

[10] CAPACITANCE AND DOPING PROFILES OF ION-IMPLANTED, BURIED-CHANNEL MOSFETS [J].

LUBBERTS, G ;

BURKEY, BC .

SOLID-STATE ELECTRONICS, 1979, 22 (01) :47-54

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