BAND-GAP ENERGY AND STRESS OF GAAS GROWN ON SI BY MOCVD

被引:11
作者
SAKAI, S [1 ]
SOGA, T [1 ]
UMENO, M [1 ]
机构
[1] NAGOYA UNIV, FAC ENGN, DEPT ELECTR, NAGOYA, AICHI 464, JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1986年 / 25卷 / 11期
关键词
D O I
10.1143/JJAP.25.1680
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1680 / 1683
页数:4
相关论文
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