A COMPARATIVE-STUDY OF GAINP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY CBE USING TBA/TBP AND ASH3/PH3 SOURCES

被引：5

作者：

NG, GI ^{[1
]}

PAVLIDIS, D ^{[1
]}

SAMELIS, A ^{[1
]}

PEHLKE, D ^{[1
]}

GARCIA, JC ^{[1
]}

HIRTZ, JP ^{[1
]}

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91404 ORSAY,FRANCE

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 10期

关键词：

D O I：

10.1109/55.320974

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaInP/GaAs Heterojunction Bipolar Transistors (HBT's) have been fabricated on epitaxial layers grown by Chemical Beam Epitaxy (CBE) using an all metalorganic approach. Reduced toxicity tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) were used for group V Sources. DC results showed good base and collector current ideality factors of 1.23 and 1.05 respectively. The maximum de current of 50 was obtained. A comparison of these results with HBT characteristics obtained using AsH3/PH3 or TBA/PH3 demonstrates the feasibility of replacing the toxic AsH3 and PH3 by less toxic TBA and TBP sources in the growth of GaInP/GaAs HBT's.

引用

收藏

页码：380 / 382

页数：3

相关论文

共 12 条

[1] THE USE OF TERTIARYBUTYLPHOSPHINE AND TERTIARYBUTYLARSINE FOR THE METALORGANIC MOLECULAR-BEAM EPITAXY OF THE IN0.53GA0.47AS/INP AND IN0.48GA0.52P/GAAS MATERIALS SYSTEMS [J].

BEAM, EA ;

HENDERSON, TS ;

SEABAUGH, AC ;

YANG, JY .

JOURNAL OF CRYSTAL GROWTH, 1992, 116 (3-4) :436-446

[2] VERY HIGH-GAIN IN CARBON-DOPED BASE HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CHEMICAL BEAM EPITAXY [J].

BENCHIMOL, JL ;

ALEXANDRE, F ;

DUBONCHEVALLIER, C ;

HELIOT, F ;

BOURGUIGA, R ;

DANGLA, J ;

SERMAGE, B .

ELECTRONICS LETTERS, 1992, 28 (14) :1344-1345

[3] CARBON-DOPED BASE GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION USING CARBON-TETRACHLORIDE AS A DOPANT SOURCE [J].

CUNNINGHAM, BT ;

STILLMAN, GE ;

JACKSON, GS .

APPLIED PHYSICS LETTERS, 1990, 56 (04) :361-363

[4] 1ST MICROWAVE CHARACTERIZATION OF LP-MOCVD GROWN GALNP/GAAS SELF-ALIGNED HBT [J].

DELAGE, SL ;

DIFORTEPOISSON, MA ;

BLANCK, H ;

BRYLINSKI, C ;

CHARTIER, E ;

COLLOT, P .

ELECTRONICS LETTERS, 1991, 27 (03) :253-254

[5] CHEMICAL BEAM EPITAXY OF GA0.5IN0.5P USING TERTIARYBUTYLPHOSPHINE [J].

GARCIA, JC ;

REGRENY, P ;

DELAGE, SL ;

BLANCK, H ;

HIRTZ, JP .

JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :255-257

[6] MOCVD GROWN CARBON-DOPED GRADED-BASE ALGAAS-GAAS HBTS [J].

ITO, H .

ELECTRONICS LETTERS, 1990, 26 (23) :1977-1978

[7] CARBON-DOPED BASE ALGAAS GAAS HBTS GROWN BY MOCVD USING TMAS [J].

ITO, H ;

KOBAYASHI, T ;

ISHIBASHI, T .

ELECTRONICS LETTERS, 1989, 25 (19) :1302-1303

[8] MICROWAVE PERFORMANCE OF A SELF-ALIGNED GAINP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

LIU, W ;

FAN, SK ;

HENDERSON, T ;

DAVITO, D .

IEEE ELECTRON DEVICE LETTERS, 1993, 14 (04) :176-178

[9] HETEROJUNCTION BIPOLAR-TRANSISTOR USING A (GA,IN)P EMITTER ON A GAAS BASE, GROWN BY MOLECULAR-BEAM EPITAXY [J].

MONDRY, MJ ;

KROEMER, H .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) :175-177

[10] HIGH-PERFORMANCE GAAS GAINP HETEROSTRUCTURE BIPOLAR-TRANSISTORS GROWN BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

RAZEGHI, M ;

OMNES, F ;

DEFOUR, M ;

MAUREL, P ;

HU, J ;

WOLK, E ;

PAVLIDIS, D .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (03) :278-280