DEGRADATION OF JUNCTION LEAKAGE IN DEVICES SUBJECTED TO GATE OXIDATION IN NITROUS-OXIDE

被引：7

作者：

MATHEWS, VK ^{[1
]}

MADDOX, RL ^{[1
]}

FAZAN, PC ^{[1
]}

ROSATO, J ^{[1
]}

HWANG, H ^{[1
]}

LEE, J ^{[1
]}

机构：

[1] UNIV TEXAS,MICROELECTR RES CTR,AUSTIN,TX 78712

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 12期

关键词：

D O I：

10.1109/55.192873

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nitrided gate oxides offer several electrical and reliability advantages over conventional oxides and also provide a good barrier against impurity diffusion. Oxidation in nitrous oxide (N2O) has been very successful in overcoming some of the problems associated with nitridation in ammonia. In this study we have observed, for the first time, that the extent of N2O oxidation has a strong detrimental effect on the drain leakage current of MOS transistors in the off state. This phenomenon has been identified to be caused by an increase in the active area junction leakage current.

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页码：648 / 650

页数：3

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