INFLUENCE OF PROCESS PARAMETERS ON THE COMPOSITION AND THE ELECTRICAL-PROPERTIES OF THIN-PLASMA-NITRIDED OXIDES

被引：11

作者：

FAZAN, PC

STOCKER, E

DUTOIT, M

XANTHOPOULOS, N

VOGEL, A

MATHIEU, HJ

机构：

[1] SWISS FED INST TECHNOL,INST MICRO & OPTOELECTR,CH-1015 LAUSANNE,SWITZERLAND

[2] SWISS FED INST TECHNOL,DEPT MAT SCI,CH-1007 LAUSANNE,SWITZERLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1092 / 1098

页数：7

共 22 条

[1] ION RESPONSE TO PLASMA EXCITATION-FREQUENCY [J].

BRUCE, RH .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7064-7066

[2]

Chen L., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P620

[3] CHARGE TRAPPING AND BREAKDOWN IN THIN SIO2 POLYSILICON-GATE MOS CAPACITORS [J].

DUTOIT, M ;

FAZAN, P ;

BENJELLOUN, A ;

ILEGEMS, M ;

MORET, JM .

APPLIED SURFACE SCIENCE, 1987, 30 (1-4) :333-338

[4] NITRIDATION OF THIN SIO2-FILMS IN N2 AND NH3 PLASMAS [J].

FAZAN, P ;

DUTOIT, M ;

ILEGEMS, M .

APPLIED SURFACE SCIENCE, 1987, 30 (1-4) :224-228

[5]

FAZAN P, 1987, P S SILICON NITRIDE, V8710, P398

[6] THERMAL NITRIDATION OF SILICON DIOXIDE FILMS [J].

HABRAKEN, FHPM ;

KUIPER, AET ;

TAMMINGA, Y .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6996-7002

[7] DIRECT THERMAL NITRIDATION OF SILICON DIOXIDE FILMS IN ANHYDROUS AMMONIA GAS [J].

ITO, T ;

NOZAKI, T ;

ISHIKAWA, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (09) :2053-2057

[8] ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS [J].

ITO, T ;

NAKAMURA, T ;

ISHIKAWA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :498-502

[9] CHARACTERISTICS OF THERMALLY NITRIDED SILICON DIOXIDE FILM AND PLASMA ENHANCEMENT [J].

KATO, I ;

ITO, T ;

NAKAMURA, T ;

ISHIKAWA, H .

JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (06) :913-929

[10] EFFECTS OF AMMONIA ANNEAL ON ELECTRON TRAPPINGS IN SILICON DIOXIDE [J].

LAI, SK ;

DONG, DW ;

HARTSTEIN, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) :2042-2044

← 1 2 3 →