SUBTHRESHOLD AND NEAR-THRESHOLD CONDUCTION IN GAAS/ALGAAS MODFETS

被引：6

作者：

JIANG, C ^{[1
]}

TSUI, DC ^{[1
]}

LEVY, HM ^{[1
]}

LEE, H ^{[1
]}

KOHN, E ^{[1
]}

机构：

[1] SIEMENS CORP RES INC,DEPT MICROELECTR,PRINCETON,NJ 08540

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 10期

关键词：

D O I：

10.1109/16.40912

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2281 / 2287

页数：7

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